Ferroelectric tunnel junctions (FTJs) are devices at both ends, with a tunnel barrier formed by an ultra-thin ferroelectric layer in the middle, and asymmetric conductive layers (usually metal or semiconductor) on both sides. The tunneling resistance (TER ) It can be adjusted by changing the polarization direction of the ferroelectric layer to change the height and width of the barrier. The ferroelectric tunnel junction has the characteristics of simple structure, low power consumption, non-volatile and non-destructive readout, and is considered to be an important development direction for the next generation of high-performance memory.
