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Infineon introduced the second generation of highly reliable non-volatile SRAM.

April 06, 2021


[Munich, Germany, April 1, 2021] Infineon Technologies LLC, a subsidiary of Infineon Technologies AG (FSE: IFX/OTCQX: IFNNY), announced the launch of the second generation of non-volatile static RAM (nvSRAM). The new generation of devices has passed QML-Q and high-reliability industrial specifications certification, supporting non-volatile code storage and data recording applications in harsh environments, including aerospace and industrial applications.


256KbSTK14C88C and 1MbSTK14CA8CnvSRAM are available in a 32-pin 300mil dual in-line ceramic package, which meets the MIL-PRF-38535QML-Q specification (-55°C to 125°C) and Infineon’s industry standard (-40°C to 85°C) ). Both the 5V and 3V versions support boot codes, data recording and calibration data storage for aerospace, communication and navigation systems, as well as industrial blast furnace and railway control systems. Infineon also provides wafer sales to support packaging systems.


Helmut Puchner, Vice President of Infineon Technologies LLC Aerospace and Defense Business, said: "The new generation of nvSRAM expands Infineon’s leadership in the field of charge trap memory. The addition of these new high-reliability industrial devices that meet the QML-Q specification in our nvSRAM series proves We are committed to providing solutions for harsh working environments that require high-performance, high-reliability memory."

Infineon's nvSRAM technology combines high-performance SRAM with first-class SONOS non-volatile technology. Under normal operating conditions, the role of nvSRAM is similar to that of traditional asynchronous SRAM. When the power is off, nvSRAM will automatically save a copy of the SRAM data to the non-volatile memory, and the protection period of the data exceeds 20 years. Infineon has delivered more than 2 billion SONOS-based non-volatile embedded or independent memories.