PLMG5200MOFT

The LMG5200 GaN half-bridge power stage supports an input voltage range of up to 80-V DC.

The body size of the LMG5200 package is 6.00 mm x 8.00 mm x 2.00 mm.

GaN FETs offer advantages for power conversion by providing high-frequency, high-efficiency operation in a small form factor. They reduce board requirements for maintaining clearance and creepage requirements for medium voltage applications while minimizing loop inductances to ensure fast switching. Additionally, GaN FETs have lower power losses compared to traditional FETs, with conduction losses being resistive losses and switching losses being computable to a first order. GaN FETs also have a user-friendly interface, making them an ideal solution for applications requiring high efficiency.