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FDV303N

MOSFET N-CH 25V 680MA SOT23

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See Product Specifications for product details.

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FDV303N

MOSFET N-CH 25V 680MA SOT23

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $1000 qualify for a $30 shipping fee waiver.

Orders surpassing $5000 enjoy waived shipping and transaction fees.

These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer:

    ON

  • Datasheet:

    FDV303N datasheet

  • Package/Case:

    SOT-23-3

  • Product Category:

    RF Integrated Circuits

  • RoHS Status: RoHS Status Lead free/RoHS Compliant

Submit your quote request now, and we expect to provide a quote within October 05, 2024. Place your order now, and we expect to complete the transaction within October 10, 2024. Ps:Time is according to GMT+8:00.

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Stock:5000 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

FDV303N Product Details

Request a quote FDV303N at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FDV303N in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:[email protected].
The price and lead time for FDV303N depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

Direction:

Leveraging proprietary high cell density DMOS technology, the FDV303N N-Channel enhancement mode field effect transistor stands out for its ability to minimize on-state resistance at low gate drive conditions. This makes it a top choice for battery circuits utilizing lithium, cadmium, or NMH cells. Its versatility extends to applications such as inverters and high-efficiency miniature discrete DC/DC conversion in compact electronic devices, delivering exceptional performance even at gate drive voltages as low as 2.5 volts

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