NVT4857UKZ

The device supports voltage levels of 1.8 V and 3.0 V for memory card operation, and a nominal supply voltage range of 1.2 V to 1.8 V for the host interface. Additionally, the device has a low dropout regulator to supply the card-side I/Os and supports various modes such as SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed, and Default-Speed modes.

The purpose of the device described in the PDF is to serve as an SD 3.0-compliant bidirectional dual voltage level translator with auto-direction control. It is designed to interface between a memory card operating at 1.8 V or 3.0 V signal levels and a host with a nominal supply voltage of 1.2 V to 1.8 V. The device supports various SD modes such as SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed, and Default-Speed modes. Additionally, it features an integrated voltage selectable low dropout regulator, auto-enable/disable function, built-in EMI filters, and robust ESD protections .

The device mentioned in the PDF has the following features and benefits: - Supports up to 208 MHz clock rate - SD 3.0 specification-compliant voltage translation to support various modes such as SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed, and Default-Speed modes - Host side interface voltage support ranging from 1.2 V to 1.8 V - Feedback channel for clock synchronization - 100 mA Low dropout voltage regulator to supply the card-side I/Os - Low power consumption by push-pull output stage with break-before-make architecture - Automatic enable and disable through VSD - Integrated pull-up and pull-down resistors, eliminating the need for external resistors - Integrated EMI filters to suppress higher harmonics of digital I/Os - Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on the card side - Level shifting buffers to keep ESD stress away from the host (zero-clamping concept) - 20-ball WLCSP with a pitch of 0.4 mm