DS1250Y-70IND+

The DS1250Y/AB 4096k Nonvolatile SRAM has the following pin descriptions: - Full functional capability for V CC greater than 4.5 volts and write protects by 4.25 volts. Data is maintained in the absence of V CC without any additional support circuitry. The nonvolatile static RAMs constantly monitor V CC. Should the supply voltage decay, the NV SRAMs automatically write protect themselves, all inputs become “don’t care,” and all outputs become high-impedance. As V CC falls below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to retain data. During power-up, when V CC rises above approximately 3.0 volts, the power switching circuit connects external V CC to RAM and disconnects the lithium energy source. Normal RAM operation can resume after V CC exceeds 4.75 volts for the DS1250AB and 4.5 volts for the DS1250Y. - The lithium energy source is electrically disconnected to retain freshness until power is applied for the first time. - The DS1250Y provides full functional capability for V CC greater than 4.5 volts and write protects by 4.25 volts. Data is maintained in the absence of V CC without any additional support circuitry.

The DS1250Y/AB nonvolatile SRAM has a minimum data retention period of 10 years in the absence of external power.

The PowerCap Module (PCM) package for the nonvolatile SRAM product has the following features: - It integrates SRAM memory and nonvolatile control into a module base along with contacts for connection to the lithium battery in the DS9034PC PowerCap . - The package design allows the DS1250 PCM device to be surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow soldering . - After reflow soldering the DS1250 PCM module base, a DS9034PC PowerCap is snapped on top to form a complete Nonvolatile SRAM module . - The DS9034PC is keyed to prevent improper attachment