MX25R8035FM1IH1

The key features of the MX25R8035F flash memory include: 1. Sequential read operation on the whole chip using MXSMIO® (Serial Multi I/O) . 2. Auto program/erase algorithms for specified page or sector/block locations . 3. Program command executed on byte, page (256 bytes), or word basis; erase command executed on 4K-byte sector, 32K-byte block, 64K-byte block, or whole chip basis . 4. Inclusion of a status register to indicate chip status, with a status read command to detect completion status of program or erase operation via WIP bit . 5. Advanced security features for protection and security functions . 6. Utilization of Macronix's proprietary memory cell for reliable storage of memory contents even after 100,000 program and erase cycles . 7. Configuration as 8Mb bits Serial NOR Flash memory, with various I/O modes including single, two, and four I/O modes . 8. Serial peripheral interface and software protocol for operation on a simple 3-wire bus . 9. Different temperature ranges and package options available, such as 8-SOP and 8-USON . 10. Additional features include flexible block protection, 8K-bit security OTP, and different read performance modes .

The MX25R8035F flash memory operates within a voltage range of 1.65V to 3.6V for Read, Erase, and Program Operations.

The MX25R8035F flash memory supports Single I/O, Dual I/O, and Quad I/O modes.