IRFSL11N50A

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For high-power applications, the IRFSL11N50A N-channel power MOSFET is the go-to solution. With a 500V drain-source voltage rating and a continuous drain current of 11A, this MOSFET is engineered to deliver reliable and efficient performance in demanding circuits. Its low on-resistance of 0.45 ohms minimizes power dissipation, ensuring maximum efficiency and prolonging the lifespan of the device. The fast switching speed of the IRFSL11N50A makes it ideal for high-frequency switching applications, providing precise and responsive control. Moreover, its high avalanche energy rating and temperature coefficient of -70 ppm/°C ensure ruggedness and stability, even in extreme operating conditions. Packaged in a compact TO-262 package, this MOSFET is an excellent choice for applications where space is at a premium