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HSB649A-C

HSMC Discrete Semiconductors Transistors TO-126

HSB649A-C
  • HSB649A-C
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HSB649A-C

HSMC Discrete Semiconductors Transistors TO-126

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $1000 qualify for a $30 shipping fee waiver.

Orders surpassing $5000 enjoy waived shipping and transaction fees.

These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer：

    HSMC

  • Datasheet：

    HSB649A-C datasheet

  • Package/Case：

    TO-126

  • Product Category：

    Transistors

  • RoHS Status：

Submit your quote request now, and we expect to provide a quote within May 09, 2024. Place your order now, and we expect to complete the transaction within May 14, 2024. Ps:Time is according to GMT+8:00.

Delivery：
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Payment ：
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Stock：4400 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

HSB649A-C Product Details

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Description

Low frequency power amplifier complementary pair with HSD669A.

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures 

  Storage Temperature.............................-55 ~ +150 °C 

  Junction Temperature............................+150 °C Maximum 

• Maximum Power Dissipation 

  Total Power Dissipation ........................1 W 

  Total Power Dissipation (Tc=25°C) .............20 W 

• Maximum Voltages and Currents 

  BVCBO Collector to Base Voltage.................-180 V 

  BVCEO Collector to Emitter Voltage..............-160 V 

  BVEBO Emitter to Base Voltage...................-5 V 

  IC Collector Current (DC) ......................-1.5 A 

  IC Collector Current (Pulse) ................... -3 A


Electrical Characteristics (Ta=25°C)

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Classification Of hFE1

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TO-126ML Dimension

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3-Lead TO-126ML Plastic Package HSMC Package Code: D


Marking:

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Style: Pin 1.Emitter 2.Collector 3.Base

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Notes: 

1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 

2.Controlling dimension: millimeters. 

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 

4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. 

Material: 

• Lead: 42 Alloy; solder plating 

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0


Request a quote HSB649A-C at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of HSB649A-C in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：[email protected].
The price and lead time for HSB649A-C depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

Direction：

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

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