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MB85RS256TYPNF-G-BCERE1

256KBIT FRAM SPI 1.8-3.6V 125C

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MB85RS256TYPNF-G-BCERE1

256KBIT FRAM SPI 1.8-3.6V 125C

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $1000 qualify for a $30 shipping fee waiver.

Orders surpassing $5000 enjoy waived shipping and transaction fees.

These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer:

    Fujitsu

  • Datasheet:

    MB85RS256TYPNF-G-BCERE1 datasheet

  • Package/Case:

    8-SOIC (0.154, 3.90mm Width)

  • Product Category:

    Memory

  • RoHS Status:

Submit your quote request now, and we expect to provide a quote within November 05, 2024. Place your order now, and we expect to complete the transaction within November 08, 2024. Ps:Time is according to GMT+8:00.

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Stock:5150 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

MB85RS256TYPNF-G-BCERE1 Product Details

Request a quote MB85RS256TYPNF-G-BCERE1 at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of MB85RS256TYPNF-G-BCERE1 in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:[email protected].
The price and lead time for MB85RS256TYPNF-G-BCERE1 depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

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Fujitsu Semiconductor's MB85RS256TYPNF-G-BCERE1 is a state-of-the-art non-volatile ferroelectric RAM (FRAM) memory device designed to deliver superior performance and reliability in a variety of applications. Boasting a 256-kilobit capacity and a supply voltage of 2.7 to 3.6 volts, this device is well-equipped to handle the demands of modern electronics. Its high-speed SPI interface, with a maximum data rate of 5 MHz, ensures efficient and rapid data transfer, while its fast read and write speeds, low power consumption, and exceptional endurance make it an ideal choice for high-intensity applications. With a data retention of 10 years at 85°C and an endurance of 10^13 read/write cycles, the MB85RS256TYPNF-G-BCERE1 is built to offer long-lasting and robust performance. Housed in an industry-standard 8-pin SOP package, it is easily integrated into existing designs. Its wide operating temperature range of -40°C to 85°C further enhances its suitability for use in challenging environmental conditions. Furthermore, the MB85RS256TYPNF-G-BCERE1 incorporates advanced security features, including hardware write protection and a unique device ID, to ensure the safety and confidentiality of stored data. Whether it's for smart meters, industrial automation, automotive systems, or other applications that demand frequent read and write operations, this FRAM memory device from Fujitsu Semiconductor stands out as a reliable and high-performance solution

MB85RS256TYPNF-G-BCERE1

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