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MRFE6S9160H

N-Channel Enhancement-Mode Lateral MOSFETs

MRFE6S9160H
  • MRFE6S9160H
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MRFE6S9160H

N-Channel Enhancement-Mode Lateral MOSFETs

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $1000 qualify for a $30 shipping fee waiver.

Orders surpassing $5000 enjoy waived shipping and transaction fees.

These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer：

    FREESCALE/NXP/AVNET

  • Datasheet：

    MRFE6S9160H datasheet

  • Package/Case：

    SMD

  • Product Category：

    Transistors

  • RoHS Status：

Submit your quote request now, and we expect to provide a quote within April 28, 2024. Place your order now, and we expect to complete the transaction within May 01, 2024. Ps:Time is according to GMT+8:00.

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Stock：6436 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

MRFE6S9160H Product Details

• Characterized with Series Equivalent Large-Signal Impedance Parameters 

• Internally Matched for Ease of Use 

• Qualified Up to a Maximum of 32 VDD Operation 

• Integrated ESD Protection 

• RoHS Compliant 

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Description

Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. 

• Typical Single-Carrier N-CDMA. Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain ó 21 dB Drain Efficiency ó 31% ACPR @ 750 kHz Offset ó -46.8 dBc in 30 kHz Bandwidth 

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.


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Maximum Ratings

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Thermal Characteristics

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1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

Request a quote MRFE6S9160H at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of MRFE6S9160H in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：[email protected].
The price and lead time for MRFE6S9160H depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

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RF Power Field Effect Transistors

MRFE6S9160H

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