Fairchild Discrete Semiconductors Transistors TO-220
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Fairchild Discrete Semiconductors Transistors TO-220
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Fairchild
SSP45N20B datasheet
TO-220
Transistors
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V
Low gate charge ( typical 133 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings ( TC = 25°C unless otherwise noted )
Drain current limited by maximum junction temperature.
Thermal Characteristics
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