MR25H10CDFR

Some key features of the MR25H1Mb Serial SPI MRAM include: - No write delays - Unlimited write endurance - Data retention greater than 20 years - Automatic data protection on power loss - Block write protection - Fast, simple SPI interface with up to 40 MHz clock rate - 2.7 to 3.6 Volt power supply range - Low current sleep mode - Industrial temperatures - Direct replacement for serial EEPROM, Flash, FeRAM - AEC-Q100 Grade 1 Option .

The MR25H10 MRAM differs from other serial memories in terms of read and write operations by allowing both reads and writes to occur randomly in memory with no delay between writes. This means that data can be written continuously at its maximum rated clock speed without any write delays or data polling, unlike EEPROM or Flash Memory. Additionally, back-to-back WRITE commands to any random location in memory can be executed without any write delay, making it ideal for both program and data storage.

The power supply range for the MR25H1Mb Serial SPI MRAM device is 2.7 to 3.6 volts.