IS42S32800J-7TLI

The key timing parameters for the 256Mb synchronous DRAM module mentioned in the document include: - Configuration: 2M x 32 x 4 banks - Refresh Count: 4K / 64ms, 4K / 16ms - Row Addresses: A0 - A11 - Column Addresses: A0 - A8 - Bank Address Pins: BA0, BA1 - Autoprecharge Pins: A10/AP - CAS Latency: 3 cycles = 6, 7 ns; 2 cycles = 10, 10, 7.5 ns - Clk Frequency: CAS Latency = 3 cycles at 166, 143 MHz; CAS Latency = 2 cycles at 100, 100, 133 MHz - Access Time from Clock: CAS Latency = 3 cycles at 5.4 ns; CAS Latency = 2 cycles at 6.5, 6 ns - All inputs and outputs are LVTTL compatible . 256Mb SDRAM also has the ability to burst data at a high data rate with automatic column-address generation, interleave between internal banks, and randomly change column addresses on each clock cycle during burst access. It features a self-timed row precharge with the AUTO PRECHARGE function enabled. Precharging one bank while accessing another will hide the precharge cycles for seamless, high-speed, random-access operation . In summary, the key timing parameters for the 256Mb synchronous DRAM module include configuration details, refresh counts, address pins, CAS latency, clock frequency, access time, and compatibility with LVTTL signals.

The different options available for the package of the synchronous DRAM module are 90-ball TF-BGA and 86-pin TSOP2 .

The clock frequency of the IS42S32800J and IS45S32800J synchronous DRAM modules is 166 MHz and 143 MHz. These modules are fully synchronous, with all signals referenced to a positive clock edge. They operate on a single power supply of 3.3V ± 0.3V and have a programmable burst length of 1, 2, 4, 8, or full page. The IS42S32800J is available in different packages such as 86-Pin TSOP-II and 90-Ball TF-BGA, while the IS45S32800J is available in similar packages for different temperature ranges. The IS42S32800J and IS45S32800J are suitable for various applications but not recommended for life support applications unless specific conditions are met to ensure safety and effectiveness.