CY7C1049DV33-10ZSXI

Writing to the CY7C1049DV33 Static RAM is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Reading from the device is done by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The device also has automatic power-down when deselected and TTL-compatible inputs and outputs.

The CY7C1049DV33 Static RAM features an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers that enable easy memory expansion. Writing to the device is achieved by setting Chip Enable (CE) and Write Enable (WE) inputs LOW, allowing data to be written into the specified memory location. Reading from the device is done by setting Chip Enable (CE) and Output Enable (OE) LOW while setting Write Enable (WE) HIGH, displaying the contents of the specified memory location on the I/O pins. The device also has TTL-compatible inputs and outputs, making it easy to expand memory with the CE and OE features.

The maximum access time for the CY7C1049DV33 Static RAM is 10 ns for the Industrial version and 12 ns for the Automotive version.