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IC FRAM 64K SPI 20MHZ 8SOIC
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 100 Trillion (1014) Read/Writes
38 Year Data Retention (@ +75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.65V
200 A Active Current (1 MHz)
3 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.
These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.
The FM25CL64B provides substantial benefits to users of serial EEPROM as a hardware drop-in
replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.
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