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These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer:


  • Datasheet:

    FM25CL64B-GTR datasheet

  • Package/Case:

    8-SOIC (0.154, 3.90mm Width)

  • Product Category:


  • RoHS Status: RoHS Status Lead free/RoHS Compliant

Submit your quote request now, and we expect to provide a quote within April 18, 2024. Place your order now, and we expect to complete the transaction within April 23, 2024. Ps:Time is according to GMT+8:00.

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Stock:2500 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

FM25CL64B-GTR Product Details


64K bit Ferroelectric Nonvolatile RAM  

Organized as 8,192 x 8 bits 

High Endurance 100 Trillion (1014) Read/Writes 

38 Year Data Retention (@ +75ºC) 

NoDelay™ Writes 

Advanced High-Reliability Ferroelectric Process 

Very Fast Serial Peripheral Interface - SPI 

Up to 20 MHz Frequency 

Direct Hardware Replacement for EEPROM 

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) 

Sophisticated Write Protection Scheme 

Hardware Protection 

Software Protection 

Low Power Consumption

Low Voltage Operation 2.7-3.65V 

200 A Active Current (1 MHz) 

3 A (typ.) Standby Current 

Industry Standard Configuration 

Industrial Temperature -40 C to +85 C 

8-pin “Green”/RoHS SOIC and TDFN Packages


The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.  

The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.  

These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.  

The FM25CL64B provides substantial benefits to users of serial EEPROM as a hardware drop-in 

replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.  

Request a quote FM25CL64B-GTR at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FM25CL64B-GTR in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:[email protected].
The price and lead time for FM25CL64B-GTR depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.


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