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MRF6V2300NR1

10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs

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See Product Specifications for product details.

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MRF6V2300NR1

10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $200 are eligible for a limited edition Chinese-style gift.

Orders over $1000 qualify for a $30 shipping fee waiver.

Orders surpassing $5000 enjoy waived shipping and transaction fees.

These offers are applicable to both new and existing customers and are valid from January 1st, 2024, to December 31st, 2024.

  • Manufacturer:

    Avnet/NXP/Freescale

  • Datasheet:

    MRF6V2300NR1 datasheet

  • Package/Case:

    TO-270

  • Product Category:

    Transistors

  • RoHS Status:

Submit your quote request now, and we expect to provide a quote within April 28, 2024. Place your order now, and we expect to complete the transaction within May 02, 2024. Ps:Time is according to GMT+8:00.

Delivery:
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Payment :
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Stock:6332 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

MRF6V2300NR1 Product Details

• Characterized with Series Equivalent Large--Signal Impedance Parameters 

• Qualified Up to a Maximum of 50 VDD Operation 

• Integrated ESD Protection 

• 225°C Capable Plastic Package 

• RoHS Compliant 

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

Description

Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. 

• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 220 MHz Power Gain ó 25.5 dB Drain Efficiency ó 68% 

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power


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Table 1. Maximum Ratings

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Table 2. Thermal Characteristics

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Table 3. ESD Protection Characteristics

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1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.

Request a quote MRF6V2300NR1 at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of MRF6V2300NR1 in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:[email protected].
The price and lead time for MRF6V2300NR1 depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

Direction:

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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