Published :5/6/2019 2:40:46 AM
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ON Semiconductor will launch a new silicon-on-silicon
(SiC)-based hybrid igbt and associated isolated high-current IGBT gate driver
at PCIM 2019 in Nuremberg, Germany, which will begin on May 7.
The AFGHL50T65SQDC uses the latest field-stop IGBT and SiC
Schottky diode technology to provide low conduction losses and switching losses
for a wide range of power applications, including those that will benefit from
lower reverse recovery losses, such as totem-based Bridgeless power factor
correction (pfc) and inverter for the column.
The device encapsulates a silicon-based IGBT with a SiC
Schottky barrier diode to provide an excellent trade-off between the lower
performance of a silicon-based solution and the higher cost of a fully
SiC-based solution. The high-performance device is rated for 650 V and is
capable of handling continuous currents up to 100 A @25 °C (50 A@100 °C) and
pulse currents up to 200 A. For systems that require more current capability,
the positive temperature coefficient makes parallel operation easier.
The AFGHL50T65SQDC operates at junction temperatures up to
175 °C and is suitable for the most demanding power applications, including
automotive applications. It is fully AEC-Q 101 certified and further
demonstrates its suitability for electric vehicle (EV) and hybrid electric
vehicle (HEV) on-board chargers.
