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Domestic 64-layer 3D flash memory production speed increase ---dealing with Huawei's risk of short supply

Published :6/6/2019 6:26:32 AM

Click Count:2103

    Due to sanctions by the US Department of Commerce, Huawei's supply chain is facing the risk of out-of-service, especially for US companies' chips and software. In addition to CPU, RF, and network chips, Huawei's flash memory chips will also be under pressure, smartphones, servers, and A large number of NAND flash memories are used in products such as base stations.

    At present, NAND flash memory in the world is mainly in six companies such as Samsung, Toshiba, Western Digital, SK Hynix, Micron, and Intel. Among them, Micron, Intel, and Western Digital are American companies, but their NAND flash memory is relatively small in the world. The flash memory supply is still Samsung, Toshiba, and SK Hynix. Before this, Toshiba also denied that Huawei was shut down. The South Korean company is unlikely to supply the supply. Therefore, Huawei's NAND flash memory supply is temporarily not risky.

    However, in order to cope with the extreme situation, Huawei is also preparing a spare tire plan for domestic flash memory. The news said that Huawei has requested the domestic Yangtze River storage to mass-produce the 64-layer stack of 3D TLC flash memory in advance, in case of emergency, but the Yangtze River storage has not yet been confirmed or Denied the matter.

    In the field of NAND flash memory, the largest domestic investment is the Yangtze River storage. In 2016, it invested US$24 billion in building a domestic NAND memory chip base in Wuhan. Last year, it started to produce a small amount of 32-layer stacked 3D flash memory. It is expected to invest 64-layer 3D flash memory at the end of this year. Mass production work. Among them, the risk trial production is expected to start in the third quarter, and the current yield has achieved a significant climb.

    Due to the outbreak of Huawei, the production of flash memory for the Yangtze River may be advanced, which is also an opportunity for domestic companies.

    According to the news before the Yangtze River storage, the 64-layer stack is the main force of production this year and next, and the next generation will directly enter the 128-layer stack, skipping the 96-layer stack flash memory that Samsung, Micron, Toshiba, Intel and other companies are now pushing. These companies are not expected to launch a 128-layer stack of flash memory by 2020.

     In terms of flash technology, last year, Changjiang Storage introduced Xtacking's 3D NAND flash technology, which will bring unprecedented I/O performance, higher storage density and shorter time to market for 3D NAND flash. Xtacking 2.0 flash technology will be launched in August this year, and Xtacking will continue to evolve.