VS-GT100TP120N

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VS-GT100TP120N Image

IGBT 1200V 180A 652W INT-A-PAK

Manufacturer:
Vishay Semiconductors
Datasheet:
VS-GT100TP120N PDF
Product Category:
Discrete Semiconductors
Stock:
784 PCS

Product Parameter

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Order Limit
No Limit for VS-GT100TP120N
Delivery Services
Global delivery By DHL/UPS/FEDEX/TNT/ARAMEX/EMS
Payment Terms
Wire Transfer or Paypal or Western Union or MoneyGram or Credit Card
Voltage Collector Emitter Breakdown Max
1200V
Vce on Max Vge Ic
2.35V @ 15V, 100A
Supplier Device Package
INT-A-PAK
Power Max
652W
Package Case
INT-A-PAK (3 + 4)
NTC Thermistor
No
Mounting Type
Chassis Mount
Input Capacitance Cies Vce
12.8nF @ 30V
Input
Standard
IGBT Type
Trench
Current Collector Ic Max
180A
Current Collector Cutoff Max
5mA
Configuration
Half Bridge

VS-GT100TP120N Product Details

Features:

IGBT Module Trench Half Bridge 1200V 180A 652W Chassis Mount INT-A-PAK

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