2N5197

• High-power NPN bipolar junction transistor
• Designed for high-voltage, high-speed switching applications
• Low collector-emitter saturation voltage
• 3A continuous collector current
• 100V collector-emitter voltage
• 125W total power dissipation
• TO-3 package

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The 2N5197 is a silicon NPN power transistor designed for general purpose switching and amplifier applications. It has a maximum collector current rating of 3 amps and a maximum collector-base voltage of 80 volts. The transistor has a low collector-emitter saturation voltage of 0.4 volts at a collector current of 500 mA, making it suitable for high-efficiency switching applications. It also has a high current gain of 40 to 160 at a collector current of 500 mA, which makes it suitable for low-power amplification applications. The transistor is housed in a TO-39 package with a heatsink tab, which allows for easy mounting and heat dissipation. It can operate at temperatures ranging from -65 to 200 degrees Celsius, making it suitable for a wide range of operating conditions.