2N5196

• Low frequency, high current NPN transistor
• Collector current of 10A
• Collector-emitter voltage of 60V
• Power dissipation of 200W
• High current-gain bandwidth product for audio amplification
• Suitable for use in power switching applications

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The 2N5196 is a medium power, silicon NPN bipolar junction transistor designed for general purpose amplification and switching applications. It has a maximum collector-base voltage of 60V and a maximum collector current of 1A, making it suitable for a wide range of low to medium power electronic circuits. The transistor is housed in a TO-39 metal can package, providing good thermal conductivity and mechanical durability. It features a high transition frequency of 150MHz and a low saturation voltage of 0.5V, making it suitable for high frequency and low power applications. The 2N5196 has a gain bandwidth product of 300MHz and a maximum power dissipation of 1.2W, making it capable of handling moderate power levels without overheating. It has a low noise figure and high current gain, making it suitable for use in amplification circuits where signal fidelity is important.