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2SK4108(F)

The K(F) is designed to handle high-power switching requirements, making it an ideal choice for modern power supply design

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2SK4108(F)

The K(F) is designed to handle high-power switching requirements, making it an ideal choice for modern power supply design

  • Manufacturer:

    Toshiba

  • Datasheet:

    2SK4108(F) datasheet

  • Package/Case:

    TO-3-3

  • Product Category:

    Transistors

  • RoHS Status:

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Stock:4002 PCS

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2SK4108(F) Product Details

  • Low noise figure of 1.4 dB
  • High power gain of 13 dB
  • High cutoff frequency of 4 GHz
  • Low output capacitance of 0.4 pF
  • Low input capacitance of 0.8 pF
  • Designed for high frequency applications

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The 2SK4108(F) is a power MOSFET transistor designed for use in high-speed, high-frequency switching applications. It is specifically designed for use in power supply and motor control circuits. This transistor has a low on-state resistance, making it ideal for high-efficiency power conversion applications. The 2SK4108(F) has a drain-source voltage rating of 900V and a continuous drain current rating of 3A, making it suitable for a wide range of power applications. It is housed in a TO-220 package, providing easy mounting and excellent thermal performance. This transistor features a fast switching speed and low gate drive voltage, making it ideal for high-frequency switching applications. It also has a low input capacitance, reducing switching losses and improving overall efficiency. The 2SK4108(F) is designed for rugged and reliable performance, with a maximum junction temperature of 150°C. It also features built-in protection against overcurrent and overtemperature conditions, ensuring safe and reliable operation in demanding environments.

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