2SK3561(Q)

• High voltage, high speed switching power MOSFET
• Enhancement mode
• Low on-resistance
• Low gate charge
• High current capacity
• Low drive power required
• TO-220F package
• Suitable for use in power supplies, motor control, and other high voltage applications

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The 2SK3561(Q) is a N-channel MOSFET transistor designed for high-speed switching applications. It has a maximum drain-source voltage of 500V and a continuous drain current of 2A, making it suitable for a wide range of power control and conversion applications. The 2SK3561(Q) features a low on-resistance of 3.5 ohms, allowing for efficient power transfer and minimal power loss. This MOSFET transistor is housed in a TO-220 package, which provides good thermal performance and easy mounting on a heatsink for improved cooling. The 2SK3561(Q) is capable of operating at temperatures ranging from -55°C to 150°C, making it suitable for use in various environmental conditions. Furthermore, the 2SK3561(Q) has a gate threshold voltage of 2V, ensuring reliable and consistent switching performance. It also features a fast switching speed and low gate charge, enabling high-speed operation and reducing switching losses.