2SK2391(F)

• High voltage and high speed switching
• Low on-resistance
• Very low leakage current
• Ultra low gate charge
• Enhanced stability and reliability
• Low capacitance
• Compact TO-220F package
• Designed for high efficiency power management applications

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The 2SK2391(F) is a field-effect transistor (FET) designed for high power amplification in a wide range of applications. It is a P-channel MOSFET type with a maximum voltage rating of 500V and a continuous drain current of 1.8A. The transistor has a low on-state resistance of 1.8 ohms, making it suitable for high power applications where low power dissipation is desired. The 2SK2391(F) features a compact TO-220 package, allowing for easy integration into various circuit designs. It has a high thermal conductivity and can operate at temperatures up to 150 degrees Celsius, ensuring reliable performance in demanding environments. This FET is commonly used in power supply circuits, audio amplifiers, motor control systems, and lighting applications. Its high voltage and current ratings make it suitable for driving high power loads while maintaining efficiency and reliability. The transistor also has a fast switching speed and a low gate threshold voltage, allowing for precise control in pulse-width modulation (PWM) applications.