2SK1529-Y

• N-channel MOSFET
• High breakdown voltage of 900V
• Low on-resistance
• High current capacity of 6A
• Fast switching speed
• Low leakage current
• TO-3P package type
• Suitable for high voltage applications

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The 2SK1529-Y is an N-channel power MOSFET transistor manufactured by Renesas Electronics. It is designed for high-speed, high-voltage switching applications in power supplies and motor control systems. The 2SK1529-Y has a maximum drain-source voltage of 600V and a continuous drain current of 10A. It has low on-resistance of 0.65 ohms, which helps in reducing power loss and improving efficiency in high-power applications. The gate threshold voltage is specified at a maximum of 4V, allowing for easy and precise control of the switching operation. The transistor is housed in a TO-220 package, which provides good thermal conductivity for effective heat dissipation. This helps in maintaining the temperature of the device within safe operating limits even under high-power operation.