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1SS367,H3F

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1SS367,H3F Image

DIODE SCHOTTKY 10V 100MA SC76

Manufacturer:
Toshiba Semiconductor
Datasheet:
1SS367,H3F PDF
Package/Case:
SC76
Stock:
346 PCS

Product Parameter

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Order Limit
No Limit for 1SS367,H3F
Delivery Services
Global delivery By DHL/UPS/FEDEX/TNT/ARAMEX/EMS
Payment Terms
Wire Transfer or Paypal or Western Union or MoneyGram or Credit Card
Voltage Forward Vf Max If
500mV @ 100mA
Voltage DC Reverse Vr Max
10V
Supplier Device Package
*
Speed
Small Signal =
Reverse Recovery Time trr
-
Packaging
Digi-ReelR Alternate Packaging
Package Case
SC-76, SOD-323
Operating Temperature Junction
125°C (Max)
Mounting Type
Surface Mount
Diode Type
Schottky
Current Reverse Leakage Vr
20μA @ 10V
Current Average Rectified Io
100mA
Capacitance Vr F
40pF @ 0V, 1MHz

1SS367,H3F Product Details

Features:

Diode Schottky 10V 100mA Surface Mount
Diode Silicon Epitaxial Schottky Barrier Type
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode

Request a quote 1SS367,H3F at censtry.com. All items are new and original with 180 days warranty! The excellent quality and guaranteed services of 1SS367,H3F In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.
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