2SK3199

• Low on-resistance: 90mΩ
• Low input capacitance: 560pF
• Low reverse transfer capacitance: 3.5pF
• High forward transfer admittance: 3000μS
• Low noise: 0.9dB
• High breakdown voltage: 500V

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The 2SK3199 power MOSFET transistor is a versatile component ideal for a wide range of high-speed switching applications. With its impressive 500V drain-source voltage and 5A continuous drain current, this transistor delivers reliable performance in power supplies, inverters, and various electronic devices. The low on-resistance of 1.5 ohms ensures efficient power management, while the vertical DMOS structure enhances breakdown voltage and minimizes on-resistance for high-power applications. Additionally, the gate threshold voltage of 3V enables seamless compatibility with different control signals, further expanding its usability