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2SCR513RTL

Powerful amplifier component for high-energy applications

2SCR513RTL
  • 2SCR513RTL
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2SCR513RTL

Powerful amplifier component for high-energy applications

  • Manufacturer：

    ROHM Semiconductor

  • Datasheet：

    2SCR513RTL datasheet

  • Package/Case：

    TSMT-3

  • Product Category：

    IC Chips

  • RoHS Status：

Submit your quote request now, and we expect to provide a quote within May 17, 2025. Place your order now, and we expect to complete the transaction within May 21, 2025. Ps:Time is according to GMT+8:00.

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Stock：2458 PCS

Our commitment is to deliver prompt quotations within 12 hours. For further assistance, please contact us at [email protected].

2SCR513RTL Product Details

  • The 2SCR513RTL is a silicon NPN power transistor with a voltage rating of 600V and a current rating of 4A
  • It is designed for high-speed switching applications and features a low saturation voltage and high-frequency capability
  • This transistor is commonly used in power supplies, inverters, and motor control systems

    • Request a quote 2SCR513RTL at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of 2SCR513RTL in stock for sale, check stock quantity and pricing, view product specifications, and order contact us：[email protected].
    The price and lead time for 2SCR513RTL depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

    Direction：

    The 2SCR513RTL is a versatile NPN bipolar junction transistor designed to meet the needs of various electronic applications. With a maximum collector current rating of 0.5A and a maximum collector-emitter voltage rating of 50V, it is suitable for low to medium power amplification and switching tasks. Housed in a compact TO-92 package, it facilitates easy integration into circuit designs. Its high current gain and low saturation voltage make it an efficient choice for applications requiring precise control of current flow. With a maximum power dissipation rating of 0.625W, this transistor can handle moderate power levels without overheating. Additionally, its fast switching speed allows for rapid signal processing in circuits

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