• Low on-resistance RDS(on) = 0.075Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
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Silicon P Channel MOS FET High Speed Power Switching