2SP0115T2A0-06

• 2SP0115T2A0-06 is a high-speed silicon PIN photodiode
• Designed for visible to near-infrared light detection
• Low capacitance and high-speed response time
• Small package with high sensitivity
• Operating temperature range from -40°C to +85°C
• RoHS compliant

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Designed for high-frequency applications, the 2SP0115T2A0-06 power transistor module by Infineon Technologies redefines the standards in power electronics. This module features a dual-channel IGBT with a maximum collector current of 150A and a voltage rating of 600V, making it a robust choice for demanding applications. Its six-pack configuration, equipped with a central thermal interface, ensures efficient heat dissipation, while the integrated temperature sensor allows for precise monitoring and control of operating temperatures. Whether used in motor drives, renewable energy systems, or high-power applications, the 2SP0115T2A0-06 guarantees efficient switching and unmatched reliability. With its high switching frequency capabilities, this module is adept at fast-switching applications, resulting in reduced power losses and enhanced system efficiency for optimal performance