2SC5566-TD-E

• Faster switching times
• Improved thermal resistance
• Enhanced voltage tolerance
• Reduced saturation current
• Precise parameter control
• Compact design simplifies PCB

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Designed for NPN polarity operation, the 2SC5566-TD-E transistor is a robust and efficient component with a wide range of applications in electronics. With a collector-emitter voltage of 50V and a collector current rating of 4A, this transistor can handle high power and voltage levels with ease. Its typical gain bandwidth of 400MHz makes it suitable for high-frequency applications, ensuring reliable performance in demanding situations. The transistor's power dissipation rating of 3.5W provides ample thermal capacity for continuous operation without overheating. Featuring a DC current gain (hFE) of 560, the 2SC5566-TD-E offers excellent amplification characteristics for signal processing and control. Housed in a compact SOT-89 package with 3 pins, this transistor is easy to install and integrate into various electronic circuits