2N7002KT7G

• N-channel MOSFET
• Small signal SOT-23 surface mount package
• Low on-resistance
• Low gate threshold voltage
• Suitable for low voltage, low current applications
• Reliable and high performance
• RoHS compliant

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ON Semiconductor's 2N7002KT7G is an N-channel enhancement mode Field-Effect Transistor (FET) that is specifically engineered for low power, high speed switching applications in a wide variety of electronic devices. With a maximum drain-source voltage (Vds) of 60V and a maximum drain current (Id) of 300mA, this FET is well-suited for use in low voltage applications. Its low on-resistance (Rds(on)) of 5 ohms enables efficient switching and minimal power loss. The 2N7002KT7G is housed in a SOT-23 package, known for its small size and low profile, making it suitable for space-constrained applications where board space is limited. Notably, it has a gate threshold voltage (Vgs(th)) of 1 to 2.5V, allowing it to be easily driven by most logic level signals. Additionally, it boasts a fast switching speed and low gate charge, making it an ideal choice for high frequency applications