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2110-2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
Third Order Intercept: 45 dBm Typ
Power Gain: 31 dB Typ (@ f = 2140 MHz)
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
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3G Band RF Linear LDMOS Amplifier