2N5333

• High current NPN bipolar transistor
• Low beta type
• Collector current of 10A
• Collector-base voltage of 140V
• Emitter-base voltage of 5V
• Power dissipation of 75W
• Low saturation voltage
• TO-3 package

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2N5333 is a silicon PNP transistor designed for general purpose switching and amplifier applications. It has a maximum collector emitter voltage of 40V, a maximum collector current of 500mA, and a power dissipation of 625mW. The transistor is housed in a TO-92 package, which makes it easily mountable on PCBs. It has a gain bandwidth product of 80MHz and a transition frequency of 100MHz, making it suitable for applications requiring high frequency operation. The 2N5333 transistor has a low saturation voltage, typically around 0.5V at a collector current of 10mA, which minimizes power loss and improves efficiency in switching applications. It also has a fast switching speed, with a rise time of 30ns and a fall time of 50ns.