2N2906AUA

• PNP Bipolar Transistor
• High current gain
• Low collector-emitter saturation voltage
• Low noise
• Low power dissipation
• High continuous collector current
• High voltage breakdown
• Available in TO-18 package
• Operating temperature range -65°C to 200°C
• RoHS compliant

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Tailored for high-speed switching and amplification tasks, the 2N2906AUA PNP bipolar junction transistor stands as a testament to precision engineering and robust performance. With a maximum collector current of 600mA, it boasts formidable power handling capabilities, ensuring reliable operation in demanding electronic circuits. Its miniature SOT-23 surface-mount package further enhances its appeal, offering compactness without compromising functionality, making it an ideal choice for space-constrained installations. In addition, its lead (Pb)-free and RoHS compliant composition underscores its commitment to environmental sustainability, aligning with contemporary industry standards. The transistor's high current gain of up to 300 enables efficient amplification of small signals, contributing to the overall effectiveness of electronic systems. Furthermore, its low saturation voltage of 0.4V facilitates swift switching, highlighting its suitability for applications requiring rapid response times. Altogether, the 2N2906AUA encapsulates a synergy of powerful performance, space-optimized design, and eco-conscious manufacturing, establishing itself as a versatile solution for diverse high-speed applications