2N6451

• Low frequency general-purpose NPN transistor
• Designed for use in linear and switching applications
• Low noise and distortion
• High current gain (hfe) of 100 to 300
• Power dissipation of 625mW
• Operating and storage temperature ranges from -65°C to 200°C

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The 2N6451 is an N-channel JFET (Junction Field-Effect Transistor) designed for general-purpose amplifier and switching applications. It is a low-cost, high-speed device with low input and output capacitance, making it suitable for high-frequency signal processing. The 2N6451 has a maximum drain-source voltage (VDS) of 35 volts and a maximum drain current (ID) of 50 mA. The device features a low gate-source cutoff voltage (VGS(off)) of -1.5 volts, allowing for efficient switching operation. The 2N6451 has a high input impedance, typically in the order of 10^9 ohms, which makes it ideal for high-impedance signal amplification. In terms of performance characteristics, the 2N6451 offers a low noise figure and high gain, making it suitable for low-noise amplifier applications in communication systems. The device also has good linearity and wide dynamic range, making it suitable for a variety of audio and RF applications.