MR0A08BCYS35

The storage capacity of the MR0A08B magnetoresistive random access memory (MRAM) device is 1,048,576 bits, organized as 131,072 words of 8 bits.

The MR0A08B MRAM device is offered in two temperature ranges: commercial temperature range (0 to +70 °C) and industrial temperature range (-40 to +85 °C).

Some key features of the MR0A08B MRAM device include: - 1,048,576-bit memory organized as 131,072 words of 8 bits . - SRAM compatible 35 ns read/write timing with unlimited endurance . - Data is non-volatile for over 20 years and automatically protected on power loss . - Available in small footprint packages such as 44-lead plastic small-outline TSOP and 48-pin ball grid array (BGA) . - Highly reliable data storage over a wide range of temperatures, offered in commercial and industrial temperature ranges . Some benefits of the MR0A08B MRAM device are: - Replaces FLASH, SRAM, EEPROM, and MRAM in a system for a simpler and more efficient design . - Improves reliability by replacing battery-backed SRAM . - Operates on a 3.3 Volt power supply with fast 35 ns read/write cycle and SRAM compatible timing . - Provides native non-volatility with unlimited read & write endurance . - Data is always non-volatile for over 20 years at temperature . - RoHS-compliant TSOP2 and BGA packages available . MR0A08B.