ZXMS6002GQTA

The Continuous Drain Source Voltage (VDS) of the ZXMS6002GQ IntelliFET MOSFET is 60V .

The ZXMS6002GQ IntelliFET MOSFET has the following features and benefits mentioned in the document: - Continuous Drain Source Voltage VDS= 60V - On-State Resistance of 500mΩ - Nominal Load Current of 1.4A when VIN = 5V - Clamping Energy of 550mJ - Self-protected low side MOSFET with monolithic over-temperature, over-current, over-voltage (active clamp), and ESD protected logic level functionality - Intended for general-purpose switch applications with status indication and programmable current limit - Especially suited for loads with high in-rush current such as lamps and motors - Suitable for all types of resistive, inductive, and capacitive loads in switching applications

The ZXMS6002GQ IntelliFET MOSFET is especially suited for loads with a high in-rush current such as lamps and motors, as well as all types of resistive, inductive, and capacitive loads in switching applications.