CY7C1051DV33-10ZSXI

Data is written to the CY7C1051DV33 device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte LOW Enable (BLE) is LOW, then data from IO pins (IO0–IO7) is written into the location specified on the address pins (A0–A18). If Byte HIGH Enable (BHE) is LOW, then data from IO pins (IO8–IO15) is written into the location specified on the address pins (A0–A18). After writing to the device, data can be read by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte LOW Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on IO0–IO7. If Byte HIGH Enable (BHE) is LOW, then data from memory will appear on IO8 to IO15.

The key features of the CY7C1051DV33 Static RAM as mentioned in the document include: - High speed with tAA = 10 ns - Low active power with ICC = 110 mA @ 10 ns - Low CMOS standby power with ISB2 = 20 mA - 2.0V data retention capability - Automatic power-down when deselected - TTL-compatible inputs and outputs - Easy memory expansion with CE and OE features - Available in lead-free 48-ball FBGA and 44-pin TSOP II packages These features make the CY7C1051DV33 Static RAM a high-performance CMOS memory device suitable for various applications.

The input/output pins (IO0–IO15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or a Write operation (CE LOW, and WE LOW) is in progress.