December 05, 2025
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As demand for compact, high-efficiency power management grows, the NTGS4141NT1 N-Channel MOSFET from onsemi emerges as a top-tier solution. With a 30V drain-source voltage, 7A continuous current, and ultra-low 25mΩ RDS(on), this TSOP-6 packaged MOSFET excels in load switching and PC applications. Its low gate charge and fast switching (15ns rise time) make it ideal for space-constrained designs. Read on to explore its technical advantages, compare alternatives, and discover why it’s a preferred choice for engineers.
The NTGS4141NT1 is a single N-Channel Enhancement Mode MOSFET designed by onsemi for high-performance power switching. Key attributes include:
Voltage & Current: 30V VDS, 7A ID (pulsed)
Low Resistance: 25mΩ RDS(on) at 7A (10V VGS)
Fast Switching: 6ns turn-on delay, 18ns turn-off delay
Package: TSOP-6 (3mm × 1.5mm × 0.94mm), RoHS compliant
| Parameter | Value | Conditions |
|---|---|---|
| Drain-Source Voltage (VDS) | 30V | Max |
| Gate-Source Voltage (VGS) | ±20V | Max |
| Continuous Drain Current (ID) | 5A | 25°C |
| Power Dissipation (PD) | 1W | 25°C |
| Operating Temperature | -55°C to +150°C | Junction |
Consider these factors when choosing the NTGS4141NT1:
Voltage Requirements: Ensure VDS exceeds your circuit’s max voltage.
Current Handling: 5A continuous (7A pulsed) suits most load switches.
Efficiency Needs: Low RDS(on) minimizes conduction losses.
Space Constraints: TSOP-6 package saves PCB area vs. DPAK.
Load Switches: Efficient power distribution in portable devices.
Notebook/Desktop PCs: Voltage regulation modules (VRMs).
DC-DC Converters: Synchronous rectification.
According to industry reports, the global MOSFET market is projected to grow at 6.5% CAGR (2023–2030), driven by demand for energy-efficient electronics. The NTGS4141NT1 addresses trends toward:
Higher power density in compact devices
Lower RDS(on) for reduced heat dissipation
| Model | VDS (V) | ID (A) | RDS(on) (mΩ) | Package |
|---|---|---|---|---|
| NTGS4141NT1 | 30 | 7 | 25 | TSOP-6 |
| SI2301DS-T1-E3 | 20 | 2.7 | 60 | SOT-23 |
| DMN1019USN-7 | 30 | 5.8 | 35 | TSOP-6 |
Key Advantage: NTGS4141NT1 offers lower RDS(on) and higher current in the same package vs. competitors.
Approx. 8.5nC at 10V VGS (per onsemi datasheet), enabling fast switching.
Yes, if PCB space is limited, but ensure thermal dissipation meets requirements.
Absolutely. Its 30V VDS provides ample headroom.
RDS(on) increases by ~1.5× at 150°C (typical for Si MOSFETs).
3,000 units per reel (standard OEM packaging).
Next-gen MOSFETs may leverage GaN/SiC materials, but Si-based NTGS4141NT1 remains cost-effective for mainstream applications through 2025+.
For pricing, samples, or technical support, email [email protected].
