ON Semiconductor will launch a new silicon-on-silicon (SiC)-based hybrid igbt and associated isolated high-current IGBT gate driver at PCIM 2019 in Nuremberg, Germany, which will begin on May 7.
The AFGHL50T65SQDC uses the latest field-stop IGBT and SiC Schottky diode technology to provide low conduction losses and switching losses for a wide range of power applications, including those that will benefit from lower reverse recovery losses, such as totem-based Bridgeless power factor correction (pfc) and inverter for the column.
The device encapsulates a silicon-based IGBT with a SiC Schottky barrier diode to provide an excellent trade-off between the lower performance of a silicon-based solution and the higher cost of a fully SiC-based solution. The high-performance device is rated for 650 V and is capable of handling continuous currents up to 100 A @25 °C (50 A@100 °C) and pulse currents up to 200 A. For systems that require more current capability, the positive temperature coefficient makes parallel operation easier.
The AFGHL50T65SQDC operates at junction temperatures up to 175 °C and is suitable for the most demanding power applications, including automotive applications. It is fully AEC-Q 101 certified and further demonstrates its suitability for electric vehicle (EV) and hybrid electric vehicle (HEV) on-board chargers.